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Ferroelectrics Volume 63, 1985 - Issue 1

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Materials - I

The effect of random field on electronic processes, phase transitions and hologram writing in transparent ferroelectric PLZT ceramics

A. E. Krumins Institute of Solid State Physics, Latvian State University, 226063, Riga, USSR

V. I. Dimza Institute of Solid State Physics, Latvian State University, 226063, Riga, USSR

J. A. Seglins Institute of Solid State Physics, Latvian State University, 226063, Riga, USSR

A. A. Sprogis Institute of Solid State Physics, Latvian State University, 226063, Riga, USSR

Pages 253-260 | Published online: 08 Feb 2011

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https://doi.org/10.1080/00150198508221407

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Abstract

The ferroelectric phase transitions, photovoltaic effect and some peculiarities of hologram writing in PLZT are explained on the basis of the theory of highly doped and compensated ferroelectrics.

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