Kinetic behaviour and memory effects at the incommensurate phase of Rb₂ZnBr₄

C. L. Folcia Departamento de Fisica, Facultad de Ciencias, Universidad del Pais Vasco, Apdo., 644, Bilbao, Spain

J. M. Perez-Mato Departamento de Fisica, Facultad de Ciencias, Universidad del Pais Vasco, Apdo., 644, Bilbao, Spain

M. J. Tello Departamento de Fisica, Facultad de Ciencias, Universidad del Pais Vasco, Apdo., 644, Bilbao, Spain

Abstract

Memory effects of Rb₂ZnBr₄ at the incommensurate phase are rather different from those reported with similar annealing times in other incommensurate compounds. In the present material the effect involves large differences in the height of the dielectric susceptibility transition peak for different runs.

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Kinetic behaviour and memory effects at the incommensurate phase of Rb₂ZnBr₄

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Kinetic behaviour and memory effects at the incommensurate phase of Rb2ZnBr4

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Kinetic behaviour and memory effects at the incommensurate phase of Rb₂ZnBr₄