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Abstract
PLZT and PSN ceramics have been exposed to γ-radiation (energy ≈ 1.15 MeV, dose up to 3 · 109 rad), electron flux (≈4.5 MeV, dose up to 3.1018 electr./cm2) and fast neutrons (≥ 0.1 MeV, dose up to 1018 n/cm2). The irradiated material was used to study radiation effects on dielectric parameters (ε and tgδ were measured at frequencies from 1 kHz to 5 MHz), polarization (dielectric hysteresis quasistatic loops) and non-linear optical properties (I2w). The measurements were made in the region of phase transition as well as to examine annealing of radiation-induced defects.
As compared to PLZT the PSN ceramics is more resistant to radiation, the most sensitive PLZT compounds being with 7 ≤ × ≤ 9.5 at .% of La. Obtained results are explained by the change of ion charge, redistribution of vacancies in A and B sublattices of PLZT and by possible ion ordering in sublattice B of PSN with account for intrinsic fields in the relevant compounds.