Nonlinear effect in ferroelectric liquid crystal 8SI* due to interfacial interaction with substrates

Abstract

The reversed domain keeps its final state if only the sample electrodes are short-circuited. Whereas, relaxation phenomenon is observed in the open-circuit condition. These facts show that the electrostatic interaction on the electrodes is an important reason for the memory effect of the smectic X phase.

The polarization reversal can be stopped at a desired area by suitably choosing pulse width. This can be considered as a multistate memory effect induced by a combination of the surface interaction and the bistability in the bulk.

A surface interaction was studied by using scratched electrodes. It became clear that scratching treatment results to slow relaxation of the domain. This fact shows that surface treatment enhances the surface interaction.