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Ferroelectrics Volume 101, 1990 - Issue 1
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Original Articles

ZnO films for high-power microwave transducers

Yang Longqi Sichuan Institute of Piezoelectric and Acoustooptic Technology, Yongchuan, Sichuan, People's Republic of China
&
Wang Zongfu Sichuan Institute of Piezoelectric and Acoustooptic Technology, Yongchuan, Sichuan, People's Republic of China
Pages 283-287 | Received 28 Oct 1988, Published online: 10 Feb 2011
 
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Abstract

Preparation and properties of a ZnO film for high-power microwave transducers are described. The transducer performance has been demonstrated with a microwave delay line. The delay line's operating frequency was 3GHz, the average input power ≥ 1 W and pulse input power > 20 W.

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