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Abstract
R.F. magnetron Facing Target Sputtering (F.T.S.) technique has been used to grow thin films about 1 μm thick. The target elementary composition was reproduced up to 450°C deposition temperature. This is found not sufficient to form the perovskite phase in-situ. Furthermore the required post-deposition furnace annealings present drawbacks. In consequence, we have modified the F.T.S. system with an additional lead target and demonstrated the feasability of in-situ perovskite 52/48 Pb(Zr,Ti)O3 crystallization at 550°C. Preliminary electrical characterization has shown a remanent switched polarization P*r = 2μC/cm2, Ec = 30 Kv/cm, εr = 100, tg(δ) = 0,04.