Abstract
Manganese-doped lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is rhombohedral. The dielectric, ferroelectric and pyroelectric properties are reported. The influence of post-deposition treatment and poling treatment on the pyroelectric coefficient are discussed.