Abstract
A model is proposed, which explains quantitatively the aging of material properties as domain wall clamping by orienting defects. The model is examined by aging measurements.
Ferroelectrics
Volume 133, 1992 - Issue 1
![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Reprints and Corporate Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
To request a reprint or corporate permissions for this article, please click on the relevant link below:
Academic Permissions
Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?
Obtain permissions instantly via Rightslink by clicking on the button below:
If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.
Related Research Data
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation
Source:
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Theoretical study on local domain pinning effect due to defect dipole alignment
Source:
IOP Publishing
Linking provided by
