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Abstract
Dielectric memory effects—effect of thermal memory (ETM) and effect of electric field memory (EFM) have been studied in (Mn, Fe, Co, Cu, Eu) doped PLZT ceramics. The obtained results have been discussed on the assumption that the ETM and EFM depends on relaxation of domain and interphase (polar and nonpolar) boundaries influenced by changes of defects conditions at doping.