Microstructure and dielectric quality for Mn-doped (Zr_0.8Sn_0.2)TiO₄ ceramics

Y. Fang Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

Z. Xu Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

A. Hu Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

D. A. Payne Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA

Abstract

The dielectric properties of (Zr_0.8Sn_0.2)TiO₄ ceramics (ZST) are useful for microwave applications.^1,2 Several factors affect the dielectric quality (Q) and have been reviewed.^3,4 Wakino et al. ³ reported improvements in Q values (7000 at 7 GHz) for NiO additions. Nomura⁴ reported improved sintering with MnO₂ additions. A Q value of 6100 at 9.1 GHz was reported for 2 mol % MnO_2. Mechanisms by which Mn improves dielectric quality are not well understood at the present time, and are the subject of continuing investigation.

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Microstructure and dielectric quality for Mn-doped (Zr_0.8Sn_0.2)TiO₄ ceramics

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Microstructure and dielectric quality for Mn-doped (Zr0.8Sn0.2)TiO4 ceramics

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Microstructure and dielectric quality for Mn-doped (Zr_0.8Sn_0.2)TiO₄ ceramics