The insulator band structure and in-gap states in weakly doped La₂-_xSr_xCuO₄

Abstract

Strong electron correlations are included in the generalized tight-binding scheme. Band structure of undoped La₂CuO₄ is calculated with charge-transfer insulating gap E _g = 2 eV. Hole doping results in deep impurity in-gap states.

Key Words:

• Strong correlations
• band structure
• charge transfer gap
• in-gap states