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Ferroelectrics Volume 144, 1993 - Issue 1
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Theory

Memory effects in incommensurate phase and kinetic of electronic subsystem

R. F. Mamin Psysicotechnical Institute, Kazan'Science Center, Academy of Science of Russia, 420029, Kazan, Russia
Pages 191-194 | Received 22 Jun 1992, Published online: 10 Feb 2011
 
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Abstract

A new approach is proposed for describing memory effect and global hysteresis in incommensurate phase. This approach is to take account the dynamics of the nonuniform electron density in trapping levels in the semiconductor. A correlation between the abnormal physical properties of crystals and characteristics of semiconducting subsystem is established.

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