Abstract
We have performed molecular dynamics simulations on BaMgF4 and BaMnF4, both of which have been reported to have polar structures, with Tc above the melting point. We have determined the ground state structure and verified the polarization mechanism described by Keve et al.1 Polarizations of 8.5 μC/cm2 are found for the Mg compound at 0 K and 11.7 μC/cm2 for the Mn compound. We find no indication of ferroelectric phase transitions between 0 K and 1200 K for either material. We are able to reverse the polarization of the Mg compound by simulating a external field, while the Mn based material distorts, but does not reverse polarity. We have simulated substitutions of Be for Mg and Mn in these materials. We report on these results.