Preparation of Pb₅Ge₃O₁₁ thin films by multiple cathode sputtering

Abstract

Pb₅Ge₃O₁₁ thin films were prepared by multiple cathode rf-magnetron sputtering. PbO and the metal target of Ge were sputtered in an atmosphere of an argon and oxygen gas mixture. Pb₅Ge₃O₁₁ thin films with preferred c-axis orientation were formed on MgO, Pt/MgO, Pt/SiO₂/Si and RuO₂/SiO₂/Si substrates at 480 ∼490°C. An excess amount of lead compared to the stoichiometric ratio was required to compensate for the lead reevaporated from the substrate and to obtain a Pb₅Ge₃O₁₁ single phase. Pb₅Ge₃O₁₁ thin films deposited on the Pt/SiO₂/Si substrate at 490 °C, then annealed at 600 °C exhibited dielectric anomaly at around 170 °C.