Preparation and ferroelectric properties of Bi₄Ti₃O₁₂ and Ba₂NaNb₅O₁₅ films

Yoichiro Masuda Department of Electrical Engineering, Faculty of Engineerng, Hachinohe Institute of Technology, 88–1, Ohbiraki, Myho. Hachinohe, Aomori, 031

Hiroshi Masumoto Institute for Material Research, Tohoku University, 2–1–1 Katahira, Aobaku, Sendai, 980, Miyagi

Akira Baba Department of Electrical Engineering, Faculty of Engineerng, Hachinohe Institute of Technology, 88–1, Ohbiraki, Myho. Hachinohe, Aomori, 031

Takashi Goto Institute for Material Research, Tohoku University, 2–1–1 Katahira, Aobaku, Sendai, 980, Miyagi

Toshio Hirai Institute for Material Research, Tohoku University, 2–1–1 Katahira, Aobaku, Sendai, 980, Miyagi

Abstract

Polycrystalline and epitaxial films of a layer-structured ferroelectric Bi₄Ti₃O₁₂(BIT) in perovskite phase and tungsten-bronze typed

Ba₂NaNb₅O₁₅(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C.A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba.Na.Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.

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Preparation and ferroelectric properties of Bi₄Ti₃O₁₂ and Ba₂NaNb₅O₁₅ films

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Preparation and ferroelectric properties of Bi₄Ti₃O₁₂ and Ba₂NaNb₅O₁₅ films