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Abstract
The thin films of relaxor solid solution xBaZrO3 - (1-x)PbTiO3 (abbreviated to BPZT) withx=0.45 have been successfully fabricated by rf-magnetron sputtering. Crystallization behavior of amorphous BPZT thin films during RTA were investigated. Because of fast heating rate and short soaking period, crystallized film is composed with very fine grains and contains high concentration of oxygen vacancies. To reduce the oxygen vacancy, activated oxygen was employed. High storage charge density of 46 fF/μm2 and low leakage current were realized for 60 nm thick BPZT thin film. The dielectric constant dependence on temperature is very small compared with other ferroelectric thin films.