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Abstract
The PLT thin films on silicon substrate were prepared by MOD method. The relationship of dielectric constants and loss tangent with annealing temperatures and La content were investigated. Curie temperatures of PLT films decrease linearly at a rate of -17°C/mol% with increasing of La content. Ps, Pr and Ec of the films were studied by P-E hysteresis loops. Large Pr value of 19.61μC/cm2 has been achieved in PLTS films, while Ec is 164KV/cm, which is much higher than that of bulk materials.