SOL-GEL derived ferroelectric lead titanate thin films on doped silicon substrates

Abstract

PbTiO₃ thin films were fabricated by the spinning method in the sol-gel process. Films with thickness of 0.15 μm to 4.0μm were coated on doped silicon substrates, using a multiple deposition process. The processing yields highly reliable crack-free films with easy control of crystal structure and composition at firing temperature of 550 to 750 °C. The very fine grain size in PbTiO₃ films was studied as a function of firing temoperature. The ferroelectric and dielectric properties of the films were investigated using metal-ferroelectric-semiconductor configaration, and were strongly dependent on the film thickness and the firing temperature. Good ferroelectric properties can be obtained in the films of thickness more than 2μm fired at 600-650 °C.