Ferroelectric properties of PZT thin films deposited by laser ablation on nickel alloy electrode for use with silicon substrate

Toshio Ogawa Department of Electronic Engineering, Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka, JAPAN

Hideo Kidoh Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, JAPAN

Hideyuki Yashima Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, JAPAN

Akiharu Morimoto Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, JAPAN

Tatsuo Shimizu Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa, JAPAN

Abstract

Perovskite PZT phase was produced on Ni alloy/SiO₂-Si substrate at a substrate temperature above 500° C by laser ablation, but pyrochlore phase or Pb(Zr, Ti)₃O₇ phase was produced on Pt/SiO₂-Si. The 0.15μm-thick film showed a remanent polarization of 15 μC/cm² at an applied voltage of 5V; moreover, the switched charge(Q_sw) and the switching time were 5.0μ/cm² and 4.5 μs respectively for a film with 0.7 μm thickness and an electrode area of 0.002cm². The fatigue in Q_sw occurred around 10⁸ cycles.

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Ferroelectric properties of PZT thin films deposited by laser ablation on nickel alloy electrode for use with silicon substrate

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Ferroelectric properties of PZT thin films deposited by laser ablation on nickel alloy electrode for use with silicon substrate

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