Dielectric properties of valine doped tgs single crystals

Abstract

Several kinds of alanine, LiVO₃ and valine doped TGS single crystals were grown from solution by a slow cooling method. Temperature dependence dielectric spectra were measured to study the variation of transition temperature, K_max and room temperature dielectric constant depending on the dopants. Furthermore, several pieces were selected to investigate the positional inhomogeneities of the same crystal. D-E hysteresis loop measurements were done to check for the internal bias field (E_b ). The measurements did not show a high figure of merit (p/K) in valine-doped TGS because of a possible low temperature relaxation around –10°C, although it has three times higher pyroelectric coefficient than that of alanine at transition temperature (Tc).

Key Words:

• TGS
• dielectric/pyroelectric.