Monte Carlo simulation of polarization switching in ferroelectric thin films by a realistic kinetic Ising model

Jianshe Liu Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Xtngjiao Li Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Jianhong Zhao Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Longbo Huang Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Xin Huang Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Dexin Lu Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Jiangde Xuan Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, P. R. China

Haoshuang Gu Institute of Piezoelectric Ceramic Technology, Hubei University, Hubei, Wuhan, 430062, P. R. China

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Abstract

Monte Carlo simulation of polarization switching in ferroelectric thin films has been carried out by using a three-dimensional realistic kinetic Ising model with the next-nearest interactions. The realistic kinetic Ising model adopted in this paper is a single-spin-filp model. The key feature of this model is that, different from the previous kinetic Ising models such as the Glauber one, it is no longer arbitrary in the dynamic aspect. The effects of switching electric field on the switching time have been investigated, and agreement with experimental observations has been obtained.

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Monte Carlo simulation of polarization switching in ferroelectric thin films by a realistic kinetic Ising model

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Monte Carlo simulation of polarization switching in ferroelectric thin films by a realistic kinetic Ising model

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