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Abstract
Highly oriented thin films of La-modified SBN (Sr0.48Ba0.51La0.01Nb2O6:SBLN) have been repeatably prepared on Pt/Ti/SiO2/Si(100) substrate at 600°C and 13 Pa by pulsed laser deposition. The orientation depends on the gas ambient during deposition, such that the ambient N2O gas favors the c-axis orientation while O2 gas favors [311]-orientation. Electrical characterization shows a low leakage current density in these films. Both the films exhibit slim P—E hysteresis loops, while the polarization at the same electric field of the (001)-films is much larger than that of (311)-films. These films also have good fatigue endurance up to 109 switching cycles. Large temperature dependence of P—E hysteresis and dielectric constant have been observed, and show good reproducibility against thermal cycles. In the temperature range from 80°C to 120°C, the average temperature change rate of dielectric constant is about 100 K−1 at 1kHz, suggesting that these SBLN films are adequate for dielectric micro-bolometers.