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Ferroelectrics Volume 231, 1999 - Issue 1
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Session G: Domains

Domain structure, domain wall mobility and electric properties for PbTio3 and SrBi2Ta2o9thin film

Wang Yening National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Ren Xiaobing National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Liu Jianshe National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Zhang Zhigang National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Van Feng National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Lu Chaojing National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
,
Zhu Jinsong National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
&
Shen Huimin National Laboratory of Solid State Microstructure, Nanjing University, Nanjing, 210093, P.R., China
 show all
Pages 1-10 | Received 08 Dec 1998, Published online: 09 Mar 2011
 
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Abstract

TEM studies on domain structure in PbTiO3 thin film show that the domain density depends on the grain size and indirectly on the film thickness. The mobility of domain walls (DWs) has been investigated by in situ TEM and mechanical dissipation techniques, and its contribution to the permittivity (ϵ) and coercive field (Ec) was analyzed. The weak pinning of DWs in SrBi2Ta2O9 (SBT) was further confirmed by experimental results of the voltage and frequency dependence of the fatigue as well as retention.

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Related Research Data

Heterolayered PZT thin films of different thicknesses and stacking sequence
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