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Abstract
Electroplating and electroless plating are applied in the processing of ferroelectric components and they often have some negative influence on the properties of the components. Based on the results of some experiments with ferroelectric multilayer ceramic capacitors and ferroelectric ceramic semiconducting thermistors, a new mechanism for the influence of electroplating and electroless plating on ferroelectric components is proposed and discussed. According to the mechanism oxygen vacancy and free electron are formed in ferroelectric components at room-temperature by the reduction reaction of absorbed hydrogen atoms generated in electrochemical processes. Leakage current increase in ferroelectric multilayer ceramic capacitors failed in electroplating can be satisfactorily explained by the conduction of free electrons, and the weakening of the PTCR (positive temperature coefficient of resistance) effect in ferroelectric ceramic semiconducting thermistors after electroless nickel plating can be attributed to the reduction effect of adsorbed hydrogen atoms. The mechanism is further proved by the fact that the properties of failed components can be restored after a re-oxidizing treatment.