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Original Articles

CMOS prototype image sensor with edge enhancement to compensate for blurring

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Pages 503-518 | Received 10 Jan 2011, Accepted 16 Aug 2011, Published online: 30 Nov 2011
 

Abstract

In this article, the design and realisation of an analogue complementary metal oxide semiconductor (CMOS) prototype image sensor with edge enhancement to compensate for blurring is presented. The chip is designed with voltage and current modes, and the main parts are one 16 × 16 pixel array, one pair of absolute value circuits and three trans-impedance amplifiers. The technology process is TSMC 0.35 µm. The edge processing is performed in parallel on pixel level. The performance of the sensor comprises a processing time of 450 ns; an optical dynamic range of 53 dB; a power consumption, at 30 frames/s, of 1.5 mW; and a peak signal-to-noise ratio of 44 dB.

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