Theoretical analysis for microwave T- and π-type attenuator circuits using MESFETs

ABSTRACT

Field-effect transistors in T and π configurations may be used as voltage-controlled attenuators for monolithic microwave circuit applications. Design curves are presented from which the trade-offs between attentuation range, VSWR and permissible dynamic range of the microwave signal may be considered.

Additional information

Notes on contributors

J. G. OAKES

now at Raytheon, Northbrough, Massachusetts 01532, U.S.A