Expression for the optimum noise figure of microwave MESFETs

H. JAVAN Department of Electrical Engineering, Washington University, St. Louis, Missouri, 63130, U.S.A

F. J. ROSENBAUM Department of Electrical Engineering, Washington University, St. Louis, Missouri, 63130, U.S.A

R. E. GOLDWASSER Department of Electrical Engineering, Washington University, St. Louis, Missouri, 63130, U.S.A

ABSTRACT

An analytical expression for the optimum noise figure, F₀, of GaAs microwave MESFETs has been calculated. The generator impedance needed for an optimum noise figure is also derived. Predictions based on this theory compare well with reported measurements. Finally, with the aid of computer graphics, the results are displayed in a universal nomograph which can be used to determine F₀.

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Expression for the optimum noise figure of microwave MESFETs

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Expression for the optimum noise figure of microwave MESFETs

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