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Abstract
AC electrical properties of unannealed and annealed amorphous SiO/SnO2 thin films having different compositions and thicknesses and prepared by vacuum evaporation at 2 x 10-6 torr are investigated. Measurements were taken over the frequency range 200 Hz-1 MHz. The density of localized states (N) before and after annealing for different compositions have been calculated. A decrease in N after annealing accounts for the behaviour of electrical characteristics and indicates the occurrence of some structural changes of the thin films.