Field effect studies on metal-insulator-semiconductor structures of laser annealed n-type Pb_0.8Sn_0.2Te epitaxial thin films

Abstract

Pb_0.8Sn_0.2Te thin films grown by flash-evaporation were irradiated with Nd : YAG laser pulses of various energy densities (2-30 mJ/cm²). Metal-insulator-semiconductor (MIS) structures were fabricated by growing metal contacts on the other side of the substrate. DC conductivity and Hall coefficient studies were made in the temperature range 77-400 K at various gate fields for as-grown as well as laser annealed films. Total charge induced at the interface, effective field effect mobility, the values of excess charge in the space charge region have been calculated.