Microimage Photoresist Evaluation^*

* The Authors are now employed at Viatron Computer Systems Corp., Route 62. Bedford. Massachusetts 01730, U.S.A.

Abstract

Since the advent of Microimage Transistor Geometries, requiring oxide cuts in the region of one to five microns, precise specifications and easier methods of detecting process failure in the Photoresist Technology have become increasingly necessary to meet the high yield requirements of these devices. This investigation looks at the Microimaging properties of K.T.F.R. Photoresist and its associated electronic grade solvents and discusses the subject matter of exposure and line definition, chemical resistance, viscosity, pinhole densities and variations in Photoresist thickness, with all the processes and measurements being carried out on standard laboratory equipment.

Notes

* The Authors are now employed at Viatron Computer Systems Corp., Route 62. Bedford. Massachusetts 01730, U.S.A.