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Abstract
Thin films of Te-Ge alloys were prepared under vacuum, in order to explore the possibilities of the Te-Ge system as a bi-level image recording material. Experiments were mainly performed for compositions around the eutectic point, Te#;Gei8. Several modes for image recording were tested, including non-development procedures and a simple plasma etching development. Exposures were made with near uv sources at low and high intensities, as well as with an electron beam. Images of good contrast were obtained and resolution in the range of the micron was demonstrated.
Notes
Paper presented to the International Congress of Photographic Science, Cologne. 1986