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Abstract
The response of evaporated layers of doped AgBr to irradiation with electrons is studied. The sensitivity, gamma value and maximum density are determined at various accelerating voltages. Resolution of 0.15 pm wide lines is achieved at extremely high sensitivity - 10-9 C/cm2, which is 2 to 4 orders of magnitude higher than that of commercial resists used in E-beam lithography.
It is established that the distribution of latent image centres in the bulk of AgBr microcrystals is similar to that of exposure to visible light and X-ray. On this basis the mechanism of the photographic process is discussed.
Notes
Doped Silver Halide Layers: Response to E-beam Irradiation