Abstract
Semiconducting electrodes have been used to photoinject holes and electrons into the non-photoconducting crystal 1,3,5-trinitrobenzene. With these electrodes, the drift mobility tensors for holes and electrons have been measured. Mobilities are - 10−2 cm2 V · s and are weakly anisotropic. All mobilities are weakly thermally activated. The overall current transient shape used to calculate these mobilities depended upon the photoconductor used as the electrode, and the major differences are consistent with the presence of interface potential barriers. The carrier injection mechanism is discussed and the field dependence of the injection efficiency evaluated.