Abstract
The packing disorder in racemic valine is characterized by techniques previously used to control nucleation, growth, and dissolution of crystals. R,S-valine crystals were grown and dissolved in the presence of other racemic α-amino acid additives. We inferred the presence of disorder in R,S-valine crystals from the lack of enantiomeric segregation of the additives occluded inside growing crystals, and from the non-specific etch-pit formation on the faces of dissolving crystals. Subsequent X-ray diffraction studies showed the disorder to arise from “flipping” of hydrogen-bonded bilayers across interfaces which are linked by relatively weak hydrophobic interactions. Possible mechanisms for the disorder are discussed.