Ab initio configuration interaction study on the electronic structure of the X²Σ⁺, B²Σ⁺ and 3²Σ⁺ states of SiO⁺

Abstract

The energy levels and electronic structure of the X²Σ⁺, B²Σ⁺ and 3²Σ⁺ states of SiO⁺ are studied using ab initio configuration interaction (CI) calculations at and around their equilibrium internuclear distances R _e. Spectroscopic constants and the vertical excitation energy from the SiO⁺ X²Σ⁺ state are predicted for the 3²Σ⁺ state. Based on the calculated CI wavefunctions, avoided crossings of the potential energy curve for the 3²Σ⁺ state and a near-degeneracy effect in the avoided crossing region are examined. The effects of the mixing of excited configuration state functions in the total electronic wavefunctions for the 1–3 ²Σ⁺ states are investigated by analysing correlation energies in terms of the contributions from classes of excited configurations. The importance of both the near-degeneracy effect and the correlation energy effect in describing correctly the electronic structure of the 3 ²Σ⁺ state in the neighbourhood of its R _e is discussed.