Quantum chemical calculations on Al-CVD using DMEAA: surface reaction mechanism of AlH₃ on Al(111)

Abstract

An investigation has been made of the elementary surface reactions of alane and its surface dissociation products using density functional theory and a cluster model to elucidate the reaction mechanism of the deposition of aluminium in aluminium chemical vapour deposition (Al-CVD) using dimethylethylamine alane (DMEAA). Molecular structures, potential energies, and normal mode frequencies of the reactants, the products, and the transition states were calculated for each of the surface elementary reactions. Based on transition state theory, rate constants were estimated from the calculation results. The proposed reaction mechanism is the following. DMEAA is adsorbed onto an aluminium surface without any dissociation in the gas phase; DMEAA dissociates into dimethylethylamine (DMEA) and alane on the surface; DMEA is desorbed and alane remains adsorbed; the adsorbed alane molecules dissociate to AlH₂, AlH, and H on the surface; hydrogen molecules to be desorbed are produced from the hydrogen atoms of AlH whose aluminium atoms form a quasi-aluminium surface on the original surface. The cluster size and structure dependence in quantum chemical calculations has also been considered using model clusters.