Molecular dynamics simulation of stress and grain evolution

Abstract

A three-dimensional molecular dynamics simulation is carried out to study the evolution of grains and stresses during the deposition of atoms on the (100) plane of a fcc regular crystal, using the cubic system with x–y periodic boundary conditions. At the bottom an atomic surface and at the top a reflecting wall are assumed. Atoms in the system interact via the Lennard–Jones potential. During simulation the films grow according to the Volmer–Weber mode and exhibit specific shape of the stress curves. When the film becomes continuous, the stress during the growth possesses a maximum value, but later new grain boundaries are formed. Individual atoms in the grain boundaries generate compressive stress in the films.

Keywords:

• film growth
• stress
• grain
• molecular dynamics simulation

Acknowledgements

The authors thank to Professor Keshra Sangwal for careful reading of the manuscript.