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Molecular Physics
An International Journal at the Interface Between Chemistry and Physics
Volume 108, 2010 - Issue 10
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Research Articles

H2NSi radical: structures, isomerization pathways and electronic states characterization

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Pages 1277-1284 | Received 09 Nov 2009, Accepted 27 Jan 2010, Published online: 08 Jun 2010
 

Abstract

Using state-of-the-art theoretical methods, the stable isomers of H2NSi which are relevant for astrophysics, astrochemistry and ammonia silicon surface chemistry, were investigated. These computations are performed using configuration interaction ab initio methods and the aug-cc-pVQZ and cc-pVQZ basis sets. Calculations confirm the existence of three stable isomers: H2NSi, trans-HSiNH and H2SiN. The intramolecular isomerization and the H-abstraction reaction pathways on the lowest doublet potential energy surfaces are given. Insight into the pattern of the lowest doublet and quartet electronic states of these molecular species are also presented.

Acknowledgements

The authors thank the Ministerio de Ciencia e Innovación of SPAIN for the grants AYA2008-00446 and AYA2009-05801-E/AYA and to CESGA for computing facilities.

Notes

Note

1. This project was initiated by discussions with Pavel Rosmus during his last visit to CINECA (Bologna, Italy). We dedicate it to him.

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