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Molecular Physics
An International Journal at the Interface Between Chemistry and Physics
Volume 111, 2013 - Issue 18-19: Modern EPR Spectroscopy
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Invited Articles

Electrically detected double electron–electron resonance: exchange interaction of P donors and P defects at the Si/SiO interface

, , , , , & show all
Pages 2690-2695 | Received 17 Apr 2013, Accepted 13 Jun 2013, Published online: 16 Aug 2013
 

Abstract

We study the coupling of P dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron–electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2π from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P–P distances ranging from 14 nm to 20 nm.

Acknowledgements

The work was supported by DFG (Grant No. SFB 631, C3 and Grant No. SPP 1601, Br 1585/8-1) and BMBF (Grant No. EPR Solar).

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