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Abstract
Optical reflectivity spectra (3.45 to 5.90 eV) of CdS implanted with 40 keV I+ are presented for doses between 5 × 1013 and 1 × 1016 ions/cm2 and for isochronal anneals up to 550°C. Typical peaks (E 1: A, B) present in crystalline CdS decrease with increasing dose until they are no longer resolvable; however, a prominent saturation observed in Si and somewhat in GaAs is not found for doses up to 1 × 1016 ions/cm2. Correlation with similar results obtained from the Rutherford scattering technique suggests the reflection variations are damage related and verifies previous results that anobservable amorphous layer is not formed. Annealing tends to increase the peaks with complete restoration occurring for doses 7 × 1014 ions/cm2 annealed at 500°C.