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Abstract
The paper examines the angular, spatial and energy distribution of ions scattered by various faces of silicon and germanium single crystals. It is shown that, due to the orderly arrangement of atoms in the crystal lattice, the orientation effects in the angular, spatial and energy distributions are observed at temperatures exceeding the annealing temperature of ion bombardment induced radiation damage. At high temperatures of the sample a reduction of the anisotropy in the angular, spatial and energy distributions of scattered ions was observed which is due to the changing transparency of the crystal resulting from the thermal vibrations of atoms in the lattice.
Results of investigations testify to the possibility of using the orientation dependences of phenomena occurring during the interaction of ions with crystals for determining the annealing temperature of ion bombardment damage and for studying the kinetics of the process of ion bombardment. It is shown that further studies along the same lines as conducted by the authors of this paper could develop a technique for the quantitative estimation of ion bombardment damage in crystals and also in thin epitaxial films.