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Abstract
The stoichiometry of compound semiconductors interacts with the solubility of impurities. Oxygen impurity in ZnTe is a good element for solubility studies because oxygen doped ZnTe exhibits a well characterized luminescence spectrum. It is shown that Zinc implantation in nominally undoped ZnTe brings out an oxygen-related luminescence spectrum, revealing some previously inactive oxygen impurities.
Furthermore oxygen can be introduced in ZnTe by ion implantation but oxygen dissolution in Te sites is much more complete if a dual implantation (O + Zn) is carried out.