Production of radiation defects in silicon at different temperatures

Abstract

Results of backscattering measurements of radiation damage in ion implanted silicon layers are presented and compared with the results of optical and electrical investigations. The influence of several implantation parameters on amount and depth distribution of radiation damage produced at low temperatures can be described by the energy deposited into nuclear processes. In this case the depth profile of refractive index change correlates with the damage distribution.

With increasing temperature energy deposited into ionization processes becomes more and more important and the kind of defect nucleation changes. Both depth distributions of radiation damage and properties of the produced defects are different from those found after implantation at low temperatures.

There are strong correlations between modified defect production characteristics at a given temperature and the mass of implantedions.