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Original Articles

Selective sputtering of single crystals of binary semiconductor compounds

, , , &
Pages 191-199 | Received 18 Mar 1980, Published online: 19 Aug 2006
 

Abstract

The method of electron Auger-spectrometry is used to study the composition of the sputtered A(111) and B(―1―1―1) faces of InSb dendrites and the deposits sputtered from them. The obtained noticeable anisotropy of the In and Sb distribution within ejection angles ± 50° to <111> directions has been found to be in good qualitative agreement with the results of computer calculations. It has been shown that the observed compositions of the dendrites and films vary depending on sputtering time.

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