High temperature electron irradiation and isochronal annealing of p-Hg_1−xCd_xTe crystals

Abstract

The peculiarities of defect formation in p-Hg_i-x Cd _x Te crystals (x=0.195−0.205) at electron irradiation (2.3 MeV, 300 K) up to 1 × 10¹⁸ cm⁻² were investigated. It was shown that the charge carrier lifetime changed with the irradiation due to variation of the free charge carrier density and the recombination-type centre concentration. A distance of recombination centres from the valence band of 35–55 meV for the electron irradiated crystals is determined. The isochronal annealing temperature ranges for the recombination-type radiation defects and electrically active defects, induced by the irradiation, are found.