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Abstract
Ion impurity implantation into gallium arsenide and post-implantation annealing are accompanied by the formation of dislocation structure due to: a) coagulation of point defects; b) prismatic punching during precipitation.
Irradiation by indium antimonide is accompanied by a deviation from stoichiometry, the formation of pored structure and of dislocation structure at depths exceeding the penetration depth of the implanted ions.