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Abstract
The parameters of spatial distribution of B+, P+, N+, O+, Ar+, As+ and Sb+ implanted impurities have been determined within a wide energy range of 30–1000 keV for soda-lime glasses with the composition 1Na2O-4SiO2. The calculated values ([Rcirc] p , Δ[Rcirc] p , Sk) agree well with the experimental results.