Electron and ion beam effects in auger electron spectroscopy on insulating materials

Abstract

Some insulating films—like SiO₂, P-doped SiO₂, B-doped SiO₂, K-silica glasses, SiaN₄, and alumina—are of primary interest in silicon device technology. In this work the main problems concerning the electron and ion beam interactions with these materials when performing Auger analyses are outlined. A few examples of radiation effects are provided. Among these, electron stimulated desorption as well as ion beam induced adsorption and oxide reduction are treated in some detail. General trends in avoiding charging problems with Auger Electron Spectroscopy are provided.