Sputtering of UF₄ by high energy heavy ions

C. K. Meins W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152; Lincoln Laboratories, Lexington, MA

J. E. Griffith W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152; Bell Telephone Laboratories, Murray Hill, NJ

Y. Qiu W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152; Department of Modern Physics, Lanzhou University, Lanzhou, Peoples’ Republic of China

M. H. Mendenhall W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152

L. E. Seiberling W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152; Physics Department, University of Pennsylvania, Philadelphia, PA

T. A. Tombrello W. K. Kellogg Radiation Laboratory, California Institute of Technology, Pasadena, California, 91152

Abstract

The sputtering of UF₄ targets by energetic beams of ¹⁶O, ¹⁹F, and ³⁵Cl ions has been investigated for beam energies in the range 0.12 to 1.5 MeV/amu. The sputtering yields, which follow the same trend as the electronic part of the projectile energy loss in the material, are observed to have a strong dependence on the charge state of the incident ions. Data have been taken both in transmission and reflection (0° and 180° to the incident beam direction, respectively). Energy spectra of the neutral sputtered particles have been obtained for 5 MeV ¹⁹F ions and for 13 MeV ³⁵Cl ions; in both cases the spectrum has a Maxwellian form. The data obtained are compared with several models of the high energy sputtering process.

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Sputtering of UF₄ by high energy heavy ions