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Abstract
The damage formed by self-implantation in Cu and Al at two temperatures, where vacancies are considered to be either immobile or mobile, but where interstitials are always highly mobile, is studied before and after annealing, using dechanneling methods. Two different regions of damage are distinguished: a surface region coinciding with the projected range of the implanted self-ions, and a region extending up to 10 times beyond this range.
On the basis of differences on the formation of the deep and the shallow damage as a function of implantation temperature and a different behaviour of annealing it is concluded that the two regions contain different types of damage.
A mechanism is proposed that explains the observed damage distributions qualitatively. In this model the damage in the surface region of copper is assumed to consist of mainly clusters of vacancies. In the deep region of copper and aluminium it is assumed that the damage consists of clusters or loops formed by interstitials. Due to insufficient knowledge of the parameters involved a quantitative test is as yet impossible.